US 12,068,193 B2
Semiconductor device structure with interconnect structure having air gap
Hsin-Yen Huang, New Taipei (TW); Ting-Ya Lo, Hsinchu (TW); Shao-Kuan Lee, Kaohsiung (TW); Chi-Lin Teng, Taichung (TW); Shau-Lin Shue, Hsinchu (TW); and Hsiao-Kang Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 16, 2021, as Appl. No. 17/377,822.
Prior Publication US 2023/0016154 A1, Jan. 19, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC H01L 21/7682 (2013.01) [H01L 21/7685 (2013.01); H01L 21/76877 (2013.01); H01L 23/5329 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/785 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a first conductive layer formed over a substrate;
an air gap structure adjacent to the first conductive layer; and
a support layer formed over the air gap structure, wherein a bottom surface of the support layer is in direct contact with the air gap structure, and the bottom surface of the support layer is lower than a top surface of the first conductive layer and higher than a bottom surface of the first conductive layer, wherein an entirety of the support layer is formed on a top surface of the air gap structure; and
a filling layer formed over the support layer, wherein the air gap structure is separated from the filling layer by the support layer.