CPC H01L 21/67109 (2013.01) [H01L 21/67207 (2013.01); H01L 21/67248 (2013.01)] | 11 Claims |
1. A thermal processing system for performing rapid thermal processing of semiconductor workpieces, comprising: a processing chamber; a workpiece support configured to support a workpiece within the processing chamber; a heat source configured to heat the workpiece; a temperature measurement system configured to generate data indicative of a temperature of the workpiece; a cooling system configured to flow a cooling gas over the workpiece supported on the workpiece support, and comprising:
a distribution plate positioned co-axially with the workpiece support, the distribution plate having a surface parallel to the workpiece support, wherein an axis of the distribution plate is at the center of the distribution plate, the distribution plate having a plurality of holes extending axially therethrough, each of the plurality of holes of the distribution plate being at a different radial distance from a center of the distribution plate: wherein the plurality of holes comprises a first hole which extends along a first radial distance away from the axis and a second hole which extends along a second radial distance, wherein the first radial distance is greater than the second radial distance away from the axis, and wherein the first hole is larger than the second hole; and a controller configured to control the heat source and the cooling system based at least in part on the data indicative of the temperature of the workpiece to provide a flow of cooling gas into the processing chamber at a rate of about 300 slm or greater to reduce a t50 peak width of a workpiece during a thermal process.
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