US 12,068,164 B2
Bottom-up metal nitride formation
Eric James Shero, Phoenix, AZ (US)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP HOLDING B.V., Almere (NL)
Filed on Sep. 9, 2021, as Appl. No. 17/470,426.
Claims priority of provisional application 63/078,192, filed on Sep. 14, 2020.
Prior Publication US 2022/0084831 A1, Mar. 17, 2022
Int. Cl. H01L 21/285 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01)
CPC H01L 21/28568 (2013.01) [C23C 16/045 (2013.01); C23C 16/34 (2013.01); C23C 16/4408 (2013.01); C23C 16/45527 (2013.01); C23C 16/56 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for depositing metal nitride on a substrate in a reaction chamber by a vapor deposition process comprising plurality of deposition-etch cycles comprising:
at least one deposition cycle comprising:
providing a pulse of a metal precursor into the reaction chamber;
providing a pulse of a nitrogen precursor into the reaction chamber; and
removing excess metal precursor and nitrogen precursor from the reaction chamber; and
at least one etch cycle comprising:
providing a pulse of an etchant source comprising VCl4 into the reaction chamber; and
removing excess etchant source and reaction byproducts from the reaction chamber.