US 12,068,163 B2
Method for forming semiconductor structure
Hua Wang, Shanghai (CN); Changyong Xiao, Shanghai (CN); Yihui Lin, Shanghai (CN); Qin Zhang, Shanghai (CN); Yi Lu, Shanghai (CN); Xiang Hu, Shanghai (CN); Xiaona Zhu, Shanghai (CN); and Ying Jiang, Shanghai (CN)
Assigned to Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN); and Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN)
Filed by Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN); and Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN)
Filed on Oct. 25, 2021, as Appl. No. 17/452,229.
Claims priority of application No. 202011158814.X (CN), filed on Oct. 26, 2020.
Prior Publication US 2022/0130679 A1, Apr. 28, 2022
Int. Cl. H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 21/477 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 21/28556 (2013.01) [H01L 21/02274 (2013.01); H01L 21/28568 (2013.01); H01L 21/3212 (2013.01); H01L 21/477 (2013.01); H01L 21/823431 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, comprising:
providing a substrate;
forming a gate electrode layer on the substrate;
forming an interlayer dielectric layer on top surfaces of the gate electrode layer and the substrate;
forming a contact opening in the interlayer dielectric layer to expose the top surface of the gate electrode layer;
performing a defluorination treatment on the gate electrode layer; and
after performing the defluorination treatment, forming a barrier material film in the contact opening and on a top surface of the interlayer dielectric layer, and planarizing the barrier material film until the top surface of the interlayer dielectric layer is exposed, to form a barrier layer in the contact opening and on the top surface of the gate electrode layer, wherein the barrier layer is made of a material including titanium element, and a top surface of the barrier layer is coplanar with the top surface of the interlayer dielectric layer.