US 12,068,162 B2
Semiconductor device and method
Ya-Lan Chang, Hsinchu (TW); Ting-Gang Chen, Taipei (TW); Tai-Chun Huang, Hsinchu (TW); Chi On Chui, Hsinchu (TW); and Yung-Cheng Lu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 27, 2022, as Appl. No. 17/874,670.
Application 17/874,670 is a division of application No. 16/923,658, filed on Jul. 8, 2020, granted, now 11,495,464.
Prior Publication US 2022/0367193 A1, Nov. 17, 2022
Int. Cl. H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/28123 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/31053 (2013.01); H01L 21/76227 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor fin extending from a substrate;
an isolation region surrounding a lower portion of the semiconductor fin;
a metal gate structure on the semiconductor fin and the isolation region, the metal gate structure being disposed in an interlayer dielectric layer; and
an isolation structure disposed in the metal gate structure, the isolation structure separating the metal gate structure into two distinct portions, the isolation structure comprising:
a conformal silicon nitride layer extending along sidewalls of the two distinct portions of the metal gate structure;
a conformal silicon layer on the conformal silicon nitride layer; and
a silicon oxide layer on the conformal silicon layer.