CPC H01L 21/0228 (2013.01) [H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/31116 (2013.01)] | 20 Claims |
1. A method of selectively forming a silicon oxycarbide (SiOC) thin film on a dielectric surface of a substrate relative to a second surface of the substrate by a plasma enhanced atomic layer deposition (PEALD) process, wherein the PEALD process comprises at least one deposition cycle comprising:
contacting the substrate with a first vapor phase silicon reactant;
contacting the substrate with a second reactant comprising reactive species from a first plasma; and
contacting the substrate with a second plasma that is different from the first plasma.
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