US 12,068,155 B2
Anisotropic sige:b epitaxial film growth for gate all around transistor
Chen-Ying Wu, Santa Clara, CA (US); Zhiyuan Ye, San Jose, CA (US); Xuebin Li, Sunnyvale, CA (US); Sathya Chary, San Francisco, CA (US); Yi-Chiau Huang, Fremont, CA (US); and Saurabh Chopra, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 6, 2021, as Appl. No. 17/396,371.
Prior Publication US 2023/0037320 A1, Feb. 9, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01)
CPC H01L 21/02211 (2013.01) [H01L 29/0847 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66742 (2013.01); H01L 29/04 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device comprising:
forming a multi-material layer on a substrate, wherein the multi-material layer includes a plurality of crystalline first layers and a plurality of non-crystalline second layers arranged in an alternating pattern;
exposing the substrate and the multi-material layer to a gas mixture comprising:
a first precursor containing silicon;
a second precursor containing germanium; and
a third precursor containing a p-type dopant, wherein the second precursor, the third precursor, or both the second precursor and the third precursor further comprises chlorine; and
forming a source/drain layer on the substrate with predominantly <100> growth.