US 12,068,140 B2
Method and system for monitoring substrate processing apparatus
Sejin Oh, Hwaseong-si (KR); Taemin Earmme, Hwaseong-si (KR); Eunwoo Lee, Seongnam-si (KR); and Jongwoo Sun, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 9, 2021, as Appl. No. 17/372,131.
Claims priority of application No. 10-2020-0181885 (KR), filed on Dec. 23, 2020.
Prior Publication US 2022/0199374 A1, Jun. 23, 2022
Int. Cl. H01J 37/32 (2006.01); H01J 37/244 (2006.01); H01L 21/66 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01)
CPC H01J 37/32642 (2013.01) [H01J 37/244 (2013.01); H01J 37/32183 (2013.01); H01J 37/32715 (2013.01); H01L 22/20 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/334 (2013.01); H01L 21/6831 (2013.01); H01L 21/68735 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method of monitoring a substrate processing apparatus, the method comprising:
applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit;
applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter;
measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck;
measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter;
acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point; and
monitoring a state of the edge ring by comparing a threshold with the voltage ratio.