US 12,068,052 B2
Preserving blocks experiencing program failure in memory devices
Pranam Shetty, Udupi (IN); Arunkumar B, Bangalore (IN); and Haritima Swapnil, Bangalore (IN)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 28, 2022, as Appl. No. 17/682,064.
Claims priority of application No. 202141059628 (IN), filed on Dec. 21, 2021.
Prior Publication US 2023/0197186 A1, Jun. 22, 2023
Int. Cl. G11C 29/00 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 29/42 (2006.01); G11C 29/12 (2006.01)
CPC G11C 29/789 (2013.01) [G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 29/42 (2013.01); G11C 29/76 (2013.01); G11C 2029/1202 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
identifying, using a write pointer, a block of a plurality of blocks of a memory device;
performing a write operation to program data to a set of memory cells addressable by a first wordline of a plurality of wordlines associated with the block;
determining that a program fault occurred during the write operation;
determining a number of wordlines referenced by a program fault data structure that are associated with the block;
responsive to determining that the number of wordlines fails to satisfy a threshold criterion, releasing a second wordline of the plurality of wordlines to be available for write operations;
appending the second wordline to a set of wordlines associated with the block that are available for write operations; and
udating the write pointer to select, among the set of wordlines that are available for write operations, a new wordline associated with the block.