CPC G11C 29/54 (2013.01) [G06F 1/08 (2013.01); G11C 16/0483 (2013.01)] | 12 Claims |
1. A method of performing wafer-level testing of NAND flash memory, the method comprising:
receiving a strobe clock signal at an input buffer of the NAND flash memory;
performing a first sweep of the strobe clock signal, wherein performing the first sweep comprises using a rising edge of the strobe clock signal to locate one of even or odd data in the input buffer;
performing a second sweep of an inverted strobe clock signal obtained by inverting the strobe clock signal, wherein performing the second sweep comprises using a rising edge of the inverted strobe clock signal to locate the other of the even or odd data in the input buffer; and
measuring a valid data window of data in the input buffer based on the first sweep and the second sweep.
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