CPC G11C 29/42 (2013.01) [G11C 29/18 (2013.01); G11C 29/44 (2013.01); G11C 2029/1202 (2013.01); G11C 2029/1204 (2013.01)] | 16 Claims |
1. A memory system, comprising:
a non-volatile memory including a plurality of groups, each of the plurality of groups including a plurality of cell units, each of the plurality of cell units including a plurality of memory cells; and
a memory controller configured to control the non-volatile memory, wherein
the memory controller is configured to execute a first operation, the first operation including:
based on a first correction amount associated with a target group, reading data from the target group;
executing error correction on the read data;
calculating a second correction amount based on the read data and the read data after the error correction; and
updating the first correction amount to the second correction amount,
the memory controller is configured to select a first group of the plurality of groups as the target group, and
in response to a read request specifying a logical address corresponding to a first cell unit included in the first group, the memory controller is further configured to
read data from the first cell unit based on the first correction amount,
execute the error correction on the read data from the first cell unit, and
calculate the second correction amount based on the read data from the first cell unit and the read data from the first cell unit after the error correction.
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