US 12,068,047 B2
Memory system for programming dummy data to a portion of a storage region in a program mode
Sukeun Kang, Seoul (KR); Junho Seo, Hwaseong-si (KR); Dogyeong Lee, Suwon-si (KR); and Juwon Lee, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 26, 2021, as Appl. No. 17/535,771.
Claims priority of application No. 10-2021-0011793 (KR), filed on Jan. 27, 2021.
Prior Publication US 2022/0238170 A1, Jul. 28, 2022
Int. Cl. G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/28 (2006.01)
CPC G11C 16/3495 (2013.01) [G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/14 (2013.01); G11C 16/28 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An operating method of a memory system including a non-volatile memory, the operating method comprising:
storing normal data in a first storage area of the non-volatile memory in a first program mode among multiple program modes defined according to a number of bits stored in a memory cell of the non-volatile memory;
storing dummy data in the first storage area in at least one of the multiple program modes; and
copying the normal data from the first storage area to a second storage area of the non-volatile memory based on the dummy data stored in the first program mode,
wherein, in the first program mode, at least two bits are stored in the memory cell of the non-volatile memory, and
wherein the storing the dummy data in the first storage area in the at least one of the multiple program modes is performed based on a time period between a time when the first storage area is erased and a time when the first storage area is stored with the normal data.