US 12,068,042 B2
Multi time program device with power switch and non-volatile memory
Jin Hyung Kim, Goyang-si (KR); Sung Bum Park, Seongnam-si (KR); and Kee Sik Ahn, Hwaseong-si (KR)
Assigned to SK keyfoundry Inc., Cheongju-si (KR)
Filed by SK keyfoundry Inc., Cheongju-si (KR)
Filed on Dec. 7, 2021, as Appl. No. 17/544,260.
Claims priority of application No. 10-2021-0111857 (KR), filed on Aug. 24, 2021.
Prior Publication US 2023/0070554 A1, Mar. 9, 2023
Int. Cl. G11C 16/30 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/16 (2006.01)
CPC G11C 16/30 (2013.01) [G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A non-volatile memory device, comprising:
a power generator configured to generate a first positive voltage and a second positive voltage less than the first positive voltage, and to generate a first negative voltage and a second negative voltage less than the first negative voltage;
a power switch comprising:
a positive voltage switching device configured to supply the first positive voltage and the second positive voltage according to a control signal, wherein when the control signal is a logic “0”, the first positive voltage is output, and when the control signal is a logic “1”, the second positive voltage is output; and
a negative voltage switching device configured to supply the first negative voltage and the second negative voltage according to a first control signal and a second control signal, wherein when the first control signal is a logic “0”, no power is output, and when the first control signal is a logic “1”, the first or second negative voltage is output, and wherein when the second control signal is a logic “0”, the first negative voltage is output, and when the second control signal is a logic “1”, the second negative voltage is output;
a Tunnel Gate (TG) driver configured to receive one of the first positive voltage and the second positive voltage, and one of the first negative voltage and the second negative voltage,
a Control Gate (CG) driver configured to receive another of the first positive voltage and the second positive voltage, and another of the first negative voltage and the second negative voltage,
a cell array comprising a plurality of non-volatile memory cells in which an erase operation or a program operation is performed;
wherein the erase operation and the program operation are performed by the CG driver and the TG driver, and
wherein, in the erase operation, the first positive voltage greater than the second positive voltage and the first negative voltage greater than the second negative voltage are supplied to the TG driver, and the second positive voltage and the second negative voltage are supplied to the CG driver.