US 12,068,041 B2
Power reallocation for memory device
Shrikar Bhagath, San Jose, CA (US); Dean Jenkins, La Canada-Flintridge, CA (US); Hedan Zhang, Santa Clara, CA (US); Bret Winkler, Mission Viejo, CA (US); and Ning Ye, San Jose, CA (US)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Mar. 12, 2021, as Appl. No. 17/199,534.
Prior Publication US 2022/0293195 A1, Sep. 15, 2022
Int. Cl. G11C 16/30 (2006.01); G06F 30/367 (2020.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01); G06F 113/18 (2020.01); G06F 119/02 (2020.01); G06F 119/06 (2020.01); G06F 119/08 (2020.01); H01L 23/367 (2006.01)
CPC G11C 16/30 (2013.01) [G06F 30/367 (2020.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01); H01L 23/367 (2013.01); G06F 2113/18 (2020.01); G06F 2119/02 (2020.01); G06F 2119/06 (2020.01); G06F 2119/08 (2020.01)] 7 Claims
OG exemplary drawing
 
1. A data storage device, comprising:
a substrate; and
a plurality of memory die packages disposed on the substrate, wherein each memory die package has a die density that includes one or more memory dies;
wherein the die densities of the memory die packages are configured to provide an even thermal distribution across the plurality of memory die packages, and
wherein respective die densities of two memory die packages from the plurality of memory die packages are different from each other.