| CPC G11C 16/102 (2013.01) [G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01)] | 14 Claims |
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1. A programming method for a memory, wherein the memory comprises a plurality of memory cell strings, with each string connecting with a bit line at one end and with a source line at the other end and each string comprising a plurality of memory cells connected in series, wherein the plurality of memory cells are respectively coupled with a plurality of word lines, the programming method comprises:
programming a selected memory cell string according to a programming sequence;
applying, when programming a memory cell in the selected memory cell string that is coupled to a selected non-edge word line in the plurality of word lines, a first pass voltage to edge word lines in the plurality of word lines; and
applying a second pass voltage to a non-edge word line adjacent to the edge word lines, wherein:
the edge word lines are at least one word line in the plurality of word lines adjacent to the source line or at least one word line in the plurality of word lines adjacent to the bit line;
the non-edge word lines are word lines in the plurality of word lines other than the edge word lines;
the selected non-edge word line is not adjacent to the edge word lines; and
the first pass voltage is less than the second pass voltage.
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