US 12,067,478 B2
PCM-based neural network device
Yun Heub Song, Seongnam (KR); and Cheng Li, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Appl. No. 16/757,283
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
PCT Filed Oct. 17, 2018, PCT No. PCT/KR2018/012225
§ 371(c)(1), (2) Date Apr. 17, 2020,
PCT Pub. No. WO2019/078599, PCT Pub. Date Apr. 25, 2019.
Claims priority of application No. 10-2017-0134748 (KR), filed on Oct. 17, 2017.
Prior Publication US 2020/0302268 A1, Sep. 24, 2020
Int. Cl. G06N 3/049 (2023.01); G06N 3/063 (2023.01); G06N 3/065 (2023.01); G06N 3/084 (2023.01); G06N 5/046 (2023.01); G11C 11/54 (2006.01); G11C 13/00 (2006.01)
CPC G06N 3/049 (2013.01) [G06N 3/063 (2013.01); G06N 3/065 (2023.01); G06N 3/084 (2013.01); G06N 5/046 (2013.01); G11C 11/54 (2013.01); G11C 13/0004 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A phase change material (PCM)-based neural network device comprising:
a plurality of neurons disposed on each of an input layer and an output layer;
a plurality of PCMs connecting between input lines of the input layer and output lines of the output layer; and
at least one backward spike generator (BSG) shared by the plurality of neurons disposed on the output layer, and the at least one BSG is configured to generate a spike based on an output pulse output from each of the neurons of the output layer.