US 12,067,233 B2
Method and system for tuning a memory device for high-speed transitions
Shankar Athanikar, Bengaluru (IN); Akhilesh Kumar Jaiswal, Bengaluru (IN); Puneet Kukreja, Bengaluru (IN); Sumeet Paul, Bengaluru (IN); and Vinay Kumar M N, Bengaluru (IN)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 21, 2022, as Appl. No. 17/933,944.
Claims priority of application No. 202241040285 (IN), filed on Jul. 14, 2022.
Prior Publication US 2024/0020000 A1, Jan. 18, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0604 (2013.01) [G06F 3/0613 (2013.01); G06F 3/064 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for tuning a memory device for high-speed transitions, the method comprising:
receiving, by the memory device, a signal indicative of a failure of a bus sampling tuning of the memory device with default tuning parameters;
setting, by the memory device, an auto-tuning bit in a Card-Specific Data (CSD) register of the memory device in response to each auto-tuning request;
iteratively performing, by the memory device, at least the following steps until at least one pre-defined condition is satisfied:
receiving, by the memory device, an auto-tuning request from a host device;
selecting, by the memory device, a set of tuning parameters from a plurality of sets of tuning parameters; and
transmitting, by the memory device, a tuning block to the host device using the bus,
wherein the tuning block is based on the selected set of tuning parameters for tuning the memory device for high-speed transitions.