CPC G02F 1/1368 (2013.01) [G02F 1/133345 (2013.01); G02F 1/1339 (2013.01); G02F 1/134309 (2013.01); G02F 1/136286 (2013.01); H01L 27/1214 (2013.01); H01L 27/1222 (2013.01); H01L 27/1288 (2013.01); H01L 29/04 (2013.01); H01L 29/66765 (2013.01); H01L 29/78678 (2013.01); H01L 29/78696 (2013.01); H01L 29/458 (2013.01); H01L 29/4908 (2013.01)] | 15 Claims |
1. A display device comprising:
a first conductive layer having a function of a gate electrode of a transistor;
a first insulating layer over the first conductive layer;
a semiconductor layer over the first insulating layer, the semiconductor layer having a channel formation region of the transistor;
a second conductive layer over the semiconductor layer, the second conductive layer having a function of one of a source electrode and a drain electrode of the transistor;
a third conductive layer over the semiconductor layer, the third conductive layer having a function of the other of the source electrode and the drain electrode of the transistor;
a second insulating layer having a region in contact with a surface of the second conductive layer and a region in contact with a surface of the third conductive layer;
a fourth conductive layer over the second insulating layer, the fourth conductive layer having a function of a wiring; and
a pixel electrode over the second insulating layer,
wherein the second conductive layer is electrically connected to the fourth conductive layer through a first contact hole in the second insulating layer,
wherein the third conductive layer is electrically connected to the pixel electrode through a second contact hole in the second insulating layer,
wherein the fourth conductive layer has a stacked-layer structure,
wherein a thickness of the second conductive layer is smaller than a thickness of the fourth conductive layer, and
wherein an area of the second conductive layer overlapping with the semiconductor layer overlaps with the first conductive layer.
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