CPC G01R 35/005 (2013.01) [G01R 27/16 (2013.01)] | 28 Claims |
1. An integrated circuit, comprising:
a substrate;
a first metal layer formed above a top side of the substrate in a region of the substrate;
a first insulating layer formed on a top side of the first metal layer in the region of the substrate;
a resistive layer formed on a top side of the first insulating layer and lying at least partially within the region of the substrate;
a second insulating layer formed above a top side of the resistive layer in the region of the substrate;
a second metal layer formed on the top side of the second insulating layer in the region of the substrate; and
a plurality of thermally conductive vias bonded to the first metal layer and the second metal layer to provide thermal flow to at least partially equalize a temperature of the first metal layer and the second metal layer, and wherein the first metal layer and the second metal layer at least partially equalize a temperature along a length and a width of the resistive layer.
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