US 12,066,483 B2
Method for testing an integrated circuit (IC) device at a testing temperature
Genesis Benjamin Carr, Frisco, TX (US); Vijian Techanamurthy, Plano, TX (US); and Vasantkumar Prabhuda Trambadiya, Carrollton, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Nov. 11, 2022, as Appl. No. 17/985,617.
Prior Publication US 2024/0159821 A1, May 16, 2024
Int. Cl. G01R 31/28 (2006.01)
CPC G01R 31/2874 (2013.01) 20 Claims
OG exemplary drawing
 
1. A method for testing an integrated circuit (IC) device at a testing temperature, the method comprising:
fabricating the IC device based on a circuit design, the fabricated IC device comprising a power transistor, conductive input/output (I/O) leads, a temperature test switch system coupled between the conductive I/O leads, and a thermal diode coupled to the temperature test switch system;
coupling the conductive I/O leads of the fabricated IC device to a circuit test fixture;
activating the power transistor to conduct a current in the fabricated IC device via the circuit test fixture;
periodically measuring a temperature of the fabricated IC device by measuring a voltage across the thermal diode via the conductive I/O leads based on the temperature test switch system until achieving the testing temperature; and
performing functional measurements associated with the fabricated IC device at the testing temperature.