| CPC C23F 1/12 (2013.01) [C23C 8/12 (2013.01); C23C 8/80 (2013.01)] | 13 Claims |
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1. A substrate processing method for processing a substrate which has a metal layer on a principal surface,
the substrate processing method comprising:
a metal oxide layer forming step in which an oxidizing fluid is supplied toward the principal surface of the substrate, thereby forming a metal oxide layer constituted of one atomic layer or several atomic layers on a surface layer of the metal layer; and
a metal oxide layer removing step in which an etching fluid containing at least one of water in a gaseous state and water in a mist state as well as a reactive gas that reacts with the metal oxide layer together with the water is supplied toward the principal surface of the substrate, thereby etching the metal oxide layer and selectively removing it from the substrate; and
a reactive gas eliminating step in which after the metal oxide layer removing step, at least one of water in a gaseous state and water in a mist state is continuously supplied to the principal surface of the substrate, thereby eliminating the reactive gas from a space in contact with the principal surface of the substrate, wherein
cycle processing in which the metal oxide layer forming step and the metal oxide layer removing step are given as one cycle is executed at least in one cycle, thereby controlling the etching amount of the metal layer for each cycle at an accuracy of a nanometer or less.
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