US 12,065,732 B2
Film forming method and film forming apparatus
Masayuki Harashima, Nirasaki (JP); Yukio Sano, Nirasaki (JP); Michikazu Nakamura, Nirasaki (JP); and Hirokatsu Kobayashi, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 17/425,581
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed Jan. 27, 2020, PCT No. PCT/JP2020/002735
§ 371(c)(1), (2) Date Jul. 23, 2021,
PCT Pub. No. WO2020/158656, PCT Pub. Date Aug. 6, 2020.
Claims priority of application No. 2019-017111 (JP), filed on Feb. 1, 2019.
Prior Publication US 2022/0098726 A1, Mar. 31, 2022
Int. Cl. C23C 16/32 (2006.01); C23C 16/44 (2006.01); C23C 16/458 (2006.01)
CPC C23C 16/325 (2013.01) [C23C 16/4405 (2013.01); C23C 16/4583 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A film forming method of forming a silicon carbide film on a substrate to be processed, the method comprising:
forming the silicon carbide film on the substrate to be processed by loading a holder that holds the substrate to be processed into a processing container of a film forming apparatus to place the holder on a stage, and supplying a raw material gas into the processing container;
unloading the holder from the processing container;
removing a reaction product, which has been adhered to a part other than the substrate to be processed during the forming the silicon carbide film, by loading a plate-shaped member having at least a surface formed by pyrolytic carbon into the processing container to place the plate-shaped member on the stage, and supplying a fluorine-containing gas into the processing container;
after the removing the adhered reaction product, forming a silicon carbide film having a desired film thickness on the surface of the plate-shaped member by supplying the raw material gas into the processing container; and
unloading the plate-shaped member from the processing container when the silicon carbide film having the desired film thickness is formed on the plate-shaped member,
wherein the plate-shaped member used in the removing the adhered reaction product also serves as the holder used in the forming the silicon carbide film on the substrate to be processed, and
wherein in the forming the silicon carbide film having the desired film thickness on the surface of the plate-shaped member, a C/Si ratio of the raw material gas is maintained to be lower than that in the forming the silicon carbide film on the substrate to be processed until the silicon carbide film having the desired film thickness is formed on the plate-shaped member.