US 12,065,727 B2
Member for plasma processing device and plasma processing device provided with same
Kazuhiro Ishikawa, Shiga (JP); Takashi Hino, Yokohama (JP); and Shuichi Saito, Yokohama (JP)
Assigned to Kyocera Corporation, Kyoto (JP)
Appl. No. 17/299,221
Filed by KYOCERA Corporation, Kyoto (JP)
PCT Filed Dec. 2, 2019, PCT No. PCT/JP2019/046997
§ 371(c)(1), (2) Date Jun. 2, 2021,
PCT Pub. No. WO2020/116384, PCT Pub. Date Jun. 11, 2020.
Claims priority of application No. 2018-228361 (JP), filed on Dec. 5, 2018.
Prior Publication US 2022/0042161 A1, Feb. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 14/08 (2006.01); C04B 35/10 (2006.01); C04B 35/505 (2006.01); H01J 37/32 (2006.01)
CPC C23C 14/083 (2013.01) [C04B 35/10 (2013.01); C04B 35/505 (2013.01); C23C 14/081 (2013.01); H01J 37/32467 (2013.01); H01J 37/32477 (2013.01); H01J 2237/3328 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A member for a plasma processing device, comprising:
a base material containing a first element which is a metal element or a metalloid element;
a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material and a strength of adhesion of the film to the base material is 60 MPa or greater; and
an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.