	US 12,065,601 B2
	Light-emitting or light-absorbing component
Silvana Botti, Eindhoven (NL); Friedhelm Bechstedt, Eindhoven (NL); Jozef Everardus Maria Haverkort, Eindhoven (NL); Erik Petrus Antonius Maria Bakkers, Eindhoven (NL); Elham Fadaly, Eindhoven (NL); and Alain Dijkstra, Eindhoven (NL)
Assigned to TECHNISCHE UNIVERSITEIT EINDHOVEN, Eindhoven (NL)
Appl. No. 17/431,356
Filed by TECHNISCHE UNIVERSITEIT EINDHOVEN, Eindhoven (NL)
PCT Filed Feb. 18, 2020, PCT No. PCT/NL2020/050093 § 371(c)(1), (2) Date Aug. 16, 2021, PCT Pub. No. WO2020/171699, PCT Pub. Date Aug. 27, 2020.
Claims priority of provisional application 62/928,194, filed on Oct. 30, 2019.
Claims priority of provisional application 62/807,197, filed on Feb. 18, 2019.
Prior Publication US 2022/0135878 A1, May 5, 2022
Int. Cl. C09K 11/66 (2006.01); B82Y 20/00 (2011.01); C01B 33/06 (2006.01); H01L 31/028 (2006.01); H01L 31/036 (2006.01); H01L 33/18 (2010.01); H01L 33/34 (2010.01); H01S 5/34 (2006.01)

CPC C09K 11/666 (2013.01) [C01B 33/06 (2013.01); B82Y 20/00 (2013.01); C01P 2002/76 (2013.01); C01P 2004/03 (2013.01); H01L 31/028 (2013.01); H01L 31/036 (2013.01); H01L 33/18 (2013.01); H01L 33/34 (2013.01); H01S 5/3427 (2013.01)]

11 Claims

1. A light-emitting component comprising a light-emitting section comprising a hexagonal crystal structure Si_1−xGe_xcompound material, the hexagonal crystal structure Si_1−xGe_xcompound material having a direct band gap for emitting light, wherein the hexagonal crystal structure Si_1−xGe_xcompound material is structured to emit light with a B-coefficient for radiative emission of 0.7×10⁻¹⁰cm³/s<B_rad<11×10⁻¹⁰cm³/s at 300K.