US 12,064,739 B2
Chemical liquid preparation device, and substrate processing device
Hajime Nishide, Kyoto (JP); Takashi Izuta, Kyoto (JP); Takatoshi Hayashi, Kyoto (JP); Katsuhiro Fukui, Kyoto (JP); Koichi Okamoto, Kyoto (JP); Kazuhiro Fujita, Kyoto (JP); Atsuyasu Miura, Kyoto (JP); Kenji Kobayashi, Kyoto (JP); Sei Negoro, Kyoto (JP); and Hiroki Tsujikawa, Kyoto (JP)
Assigned to SCREEN Holdings Co., Ltd., Kyoto (JP)
Filed by SCREEN Holdings Co., Ltd., Kyoto (JP)
Filed on Jul. 19, 2022, as Appl. No. 17/867,693.
Application 17/867,693 is a division of application No. 16/114,253, filed on Aug. 28, 2018, granted, now 11,439,967.
Claims priority of application No. 2017-183007 (JP), filed on Sep. 22, 2017.
Prior Publication US 2022/0347641 A1, Nov. 3, 2022
Int. Cl. B01F 15/04 (2006.01); B01F 3/04 (2006.01); B01F 15/00 (2006.01); B01F 23/231 (2022.01); B01F 23/237 (2022.01); B01F 35/21 (2022.01); B01F 35/22 (2022.01); B01F 35/82 (2022.01); G05D 11/00 (2006.01); G05D 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); B01F 101/58 (2022.01)
CPC B01F 35/82 (2022.01) [B01F 23/231 (2022.01); B01F 23/237611 (2022.01); B01F 23/237612 (2022.01); B01F 23/23765 (2022.01); B01F 35/2132 (2022.01); B01F 35/2202 (2022.01); G05D 11/00 (2013.01); G05D 21/02 (2013.01); H01L 21/30608 (2013.01); H01L 21/32134 (2013.01); H01L 21/67017 (2013.01); H01L 21/67028 (2013.01); H01L 21/67051 (2013.01); H01L 21/67075 (2013.01); H01L 21/6708 (2013.01); B01F 2101/58 (2022.01)] 11 Claims
OG exemplary drawing
 
1. A chemical liquid preparation device configured to prepare a chemical liquid supplied to a film formed on a substrate in a processing unit, the device comprising:
a tank in which a chemical liquid to be supplied to the processing unit is stored; and
a gas dissolving unit configured to dissolve, in the chemical liquid stored in the tank, a mixed gas of an oxygen-containing gas which contains oxygen gas and an inert-gas-containing gas which contains an inert gas to the chemical liquid;
wherein the gas dissolving unit includes
a mixing piping through which the mixed gas is discharged into the tank,
an oxygen-containing gas piping through which the oxygen-containing gas from an oxygen-containing gas supply source is supplied to the mixed gas piping,
an inert-gas-containing gas piping through which the inert-gas-containing gas from an inert-gas-containing gas supply source is supplied to the mixed gas piping,
a first flow rate adjusting valve to change a flow rate of the oxygen-containing gas supplied from the oxygen-containing gas piping to the mixed gas piping, and
a second flow rate adjusting valve to change a flow rate of the inert-gas-containing gas supplied from the inert-gas-containing gas piping to the mixed gas piping;
the chemical liquid preparation device further comprising a controller programmed to operate the first flow rate adjusting valve and the second flow rate adjusting valve such that the first flow rate adjusting valve supplies the oxygen-containing gas with a first supply flow rate from the oxygen-containing gas piping to the mixed gas piping and that the second flow rate adjusting valve supplies the inert-gas-containing gas with a second supply flow rate from the inert-gas-containing gas piping to the mixed gas piping so as to produce the mixed gas of the oxygen-containing gas and the inert-gas-containing gas in the mixed gas piping, wherein a ratio of the first supply flow rate and the second supply flow rate are set based on a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.