CPC H10N 50/01 (2023.02) [B82Y 25/00 (2013.01); G01R 33/0011 (2013.01); G01R 33/0052 (2013.01); G01R 33/0206 (2013.01); G01R 33/09 (2013.01); G01R 33/093 (2013.01); G01R 33/096 (2013.01); G01R 33/098 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 59/00 (2023.02)] | 5 Claims |
1. A process for manufacturing an integrated magnetoresistive device, comprising the steps of:
producing a first structure by:
forming an insulating layer on top of a first surface of a first substrate having first and second surfaces; and
forming a magnetoresistor of a first ferromagnetic material within the insulating layer, the magnetoresistor defining a sensitivity plane parallel to the first and second surfaces;
producing a second structure independently of the first structure by:
opening a trench in a second substrate; and
coating a side wall of said trench with a second ferromagnetic material; and
mounting the second structure to the first structure by:
attaching the second substrate of the second structure to the insulating layer of the first structure, said second ferromagnetic material forming a concentrator having an arm on said side wall that extends longitudinally in a transverse direction to the sensitivity plane, said arm being offset from the magnetoresistor in a direction perpendicular to the first surface.
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