US 11,737,369 B2
Method for manufacturing an integrated magnetoresistive sensor
Dario Paci, Vittuone (IT); Marco Morelli, Bareggio (IT); and Caterina Riva, Cusago (IT)
Assigned to STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed by STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed on Jun. 9, 2021, as Appl. No. 17/343,388.
Application 17/343,388 is a division of application No. 16/201,264, filed on Nov. 27, 2018, granted, now 11,063,211.
Application 16/201,264 is a division of application No. 14/938,121, filed on Nov. 11, 2015, granted, now 10,177,306, issued on Jan. 8, 2019.
Application 14/938,121 is a division of application No. 13/996,922, granted, now 9,442,168, issued on Sep. 13, 2016, previously published as PCT/EP2011/074045, filed on Dec. 23, 2011.
Claims priority of application No. TO2010A001050 (IT), filed on Dec. 23, 2010.
Prior Publication US 2021/0296578 A1, Sep. 23, 2021
Int. Cl. G11B 5/127 (2006.01); H04R 31/00 (2006.01); H10N 50/01 (2023.01); B82Y 25/00 (2011.01); G01R 33/09 (2006.01); H10B 61/00 (2023.01); H10N 59/00 (2023.01); H10N 50/10 (2023.01); G01R 33/00 (2006.01); G01R 33/02 (2006.01)
CPC H10N 50/01 (2023.02) [B82Y 25/00 (2013.01); G01R 33/0011 (2013.01); G01R 33/0052 (2013.01); G01R 33/0206 (2013.01); G01R 33/09 (2013.01); G01R 33/093 (2013.01); G01R 33/096 (2013.01); G01R 33/098 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 59/00 (2023.02)] 5 Claims
OG exemplary drawing
 
1. A process for manufacturing an integrated magnetoresistive device, comprising the steps of:
producing a first structure by:
forming an insulating layer on top of a first surface of a first substrate having first and second surfaces; and
forming a magnetoresistor of a first ferromagnetic material within the insulating layer, the magnetoresistor defining a sensitivity plane parallel to the first and second surfaces;
producing a second structure independently of the first structure by:
opening a trench in a second substrate; and
coating a side wall of said trench with a second ferromagnetic material; and
mounting the second structure to the first structure by:
attaching the second substrate of the second structure to the insulating layer of the first structure, said second ferromagnetic material forming a concentrator having an arm on said side wall that extends longitudinally in a transverse direction to the sensitivity plane, said arm being offset from the magnetoresistor in a direction perpendicular to the first surface.