US 11,737,361 B2
High current OTFT devices with vertical designed structure and donor-acceptor based organic semiconductor materials
Mingqian He, Horseheads, NY (US); Robert George Manley, Ocala, FL (US); Karan Mehrotra, Montour Falls, NY (US); Hsin-Fei Meng, Hsinchu (TW); and Hsiao-Wen Zan, Hsinchu (TW)
Assigned to CORNING INCORPORATED, Corning, NY (US); and NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsin-Chu (TW)
Filed by Corning Incorporated, Corning, NY (US); and NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsin-chu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/873,240.
Application 17/873,240 is a continuation of application No. 16/695,371, filed on Nov. 26, 2019, granted, now 11,437,587.
Claims priority of application No. 201811442578.7 (CN), filed on Nov. 29, 2018.
Prior Publication US 2022/0384737 A1, Dec. 1, 2022
Int. Cl. H01L 51/50 (2006.01); H01L 51/00 (2006.01)
CPC H01L 51/0072 (2013.01) [H01L 51/0003 (2013.01); H01L 51/0017 (2013.01); H01L 51/0067 (2013.01); H01L 51/0068 (2013.01); H01L 51/0073 (2013.01); H01L 51/0074 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A device comprising:
a substrate;
a collector layer;
an emitter layer positively biased relative to the collector layer;
a semiconductor layer located between the collector layer and the emitter layer, the semiconductor layer comprising an organic semiconductor polymer with the structure:

OG Complex Work Unit Chemistry
wherein each D is an independently selected conjugated electron donating aromatic or heteroaromatic group having from 5 to 50 backbone atoms and each D group is optionally substituted with one or more electron donating substituents or electron withdrawing substituents, provided that even when substituted the electronic character of each D is electron donating; each A is an independently selected conjugated electron accepting aromatic or heteroaromatic group having from 5 to 50 backbone atoms or an ethenylene group substituted with one or two electron withdrawing substituents, each A being optionally substituted with one or more electron donating substituents or electron withdrawing substituents provided that even when substituted the electronic character of each A is electron accepting; each of a and b is an integer from 1 to 4, and n is an integer from 2 to 10,000.