US 11,737,288 B2
High-density memory device with planar thin film transistor (TFT) selector and methods for making the same
Yen-Chung Ho, Hsinchu (TW); Yong-Jie Wu, Hsinchu (TW); Chia-Jung Yu, Hsinchu (TW); Hui-Hsien Wei, Taoyuan (TW); Mauricio Manfrini, Zhubei (TW); Ken-Ichi Goto, Taiwan (TW); and Pin-Cheng Hsu, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Apr. 5, 2021, as Appl. No. 17/222,123.
Claims priority of provisional application 63/031,717, filed on May 29, 2020.
Prior Publication US 2021/0375991 A1, Dec. 2, 2021
Int. Cl. H10B 63/00 (2023.01); H10B 53/30 (2023.01); H10B 61/00 (2023.01)
CPC H10B 63/30 (2023.02) [H10B 53/30 (2023.02); H10B 61/22 (2023.02)] 20 Claims
OG exemplary drawing
 
20. A memory device comprising:
a substrate;
a bit line disposed on the substrate;
a memory cell disposed on the bit line;
a first dielectric layer disposed on the substrate, surrounding the bit line and the memory cell;
a second dielectric layer disposed on the first dielectric layer;
a thin film transistor (TFT) embedded in the second dielectric layer and configured to selectively provide electric power to the memory cell; and
a word line disposed on the second dielectric layer and electrically connected to the TFT.