CPC H10B 61/20 (2023.02) [H10N 50/01 (2023.02); H10N 50/80 (2023.02)] | 20 Claims |
1. A device comprising:
a magnetoresistive random access memory (MRAM) cell comprising:
a bottom electrode;
a magnetic tunnel junction structure electrically coupled to the bottom electrode;
a bipolar selector comprising, in order:
a first contact layer,
a first interlayer,
a tunnel junction layer,
a second interlayer, and
a second contact layer, the bipolar selector being aligned with the magnetic tunnel junction structure in a single pillar, the bipolar selector electrically coupled to the magnetic tunnel junction structure; and
a top electrode electrically coupled to the bipolar selector.
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