US 11,737,284 B2
Tunnel junction selector MRAM
Mauricio Manfrini, Zhubei (TW); and Hon-Sum Philip Wong, Stanford, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 27, 2021, as Appl. No. 17/562,680.
Application 17/562,680 is a continuation of application No. 16/589,255, filed on Oct. 1, 2019, granted, now 11,211,426.
Prior Publication US 2022/0123050 A1, Apr. 21, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10B 61/20 (2023.02) [H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a magnetoresistive random access memory (MRAM) cell comprising:
a bottom electrode;
a magnetic tunnel junction structure electrically coupled to the bottom electrode;
a bipolar selector comprising, in order:
a first contact layer,
a first interlayer,
a tunnel junction layer,
a second interlayer, and
a second contact layer, the bipolar selector being aligned with the magnetic tunnel junction structure in a single pillar, the bipolar selector electrically coupled to the magnetic tunnel junction structure; and
a top electrode electrically coupled to the bipolar selector.