US 11,737,274 B2
Curved channel 3D memory device
Kuan-Yuan Shen, Hsinchu (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Feb. 8, 2021, as Appl. No. 17/170,542.
Prior Publication US 2022/0254803 A1, Aug. 11, 2022
Int. Cl. H10B 43/27 (2023.01); G11C 8/14 (2006.01); H10B 43/10 (2023.01)
CPC H10B 43/27 (2023.02) [G11C 8/14 (2013.01); H10B 43/10 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A vertical memory structure, comprising:
a stack of alternating layers of insulator material and word line material with a vertical opening through the alternating layers, one of the layers of insulator material and layers of word line material having recessed inside surfaces facing the vertical opening, recessed relative to inside surfaces facing the vertical opening of adjacent ones of the alternating layers in the stack;
a first conductive pillar inside and on a first side of the vertical opening;
a second conductive pillar inside and on a second side of the vertical opening, and separated from the first conductive pillar, such that no portion of the first conductive pillar is in contact with any portion of the second conductive pillar;
a data storage structure disposed on inside surfaces of the layers of word line material; and
a semiconductor channel layer disposed on the data storage structures around a perimeter of the vertical opening, and having first and second source/drain terminals at contacts with the first and second conductive pillars on the first and second sides of the vertical opening.