US 11,735,686 B2
Method for manufacturing light-emitting element
Yoshiki Inoue, Anan (JP); Shun Kitahama, Tokushima (JP); Yoshiyuki Aihara, Tokushima (JP); Yoshiki Matsushita, Tokushima (JP); and Keisuke Higashitani, Tokushima (JP)
Assigned to NICHIA CORPORATION, Anan (JP)
Filed by NICHIA CORPORATION, Anan (JP)
Filed on Dec. 7, 2020, as Appl. No. 17/113,583.
Claims priority of application No. 2019-231153 (JP), filed on Dec. 23, 2019.
Prior Publication US 2021/0193867 A1, Jun. 24, 2021
Int. Cl. H01L 33/00 (2010.01); H01L 33/50 (2010.01); H01L 33/22 (2010.01)
CPC H01L 33/0095 (2013.01) [H01L 33/007 (2013.01); H01L 33/22 (2013.01); H01L 33/507 (2013.01); H01L 2933/0041 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for manufacturing a light-emitting element, the method comprising:
forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprises a plurality of protrusions;
dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the first surface is exposed from under the semiconductor structure in the exposed region;
etching the protrusions formed in the exposed region;
bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer;
after the step of bonding the light-transmitting body to the second surface, forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from a first surface side;
after the step of forming the plurality of modified regions, removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and
singulating the bonded body along the modified regions.