CPC H01L 29/1608 (2013.01) [H01L 29/045 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01)] | 18 Claims |
1. A silicon carbide device, comprising:
a silicon carbide body having a hexagonal crystal lattice with a c-plane and further main planes, wherein the further main planes comprise a-planes and m-planes, wherein a lateral mean surface plane of the silicon carbide body is tilted to the c-plane by an off-axis angle, wherein the silicon carbide body comprises a columnar portion with column sidewalls, wherein at least three of the column sidewalls are oriented along a respective one of the further main planes; and
a trench gate structure in contact with the at least three of the column sidewalls.
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