US 11,735,633 B2
Silicon carbide device with trench gate structure and method of manufacturing
Ralf Siemieniec, Villach (AT); Rudolf Elpelt, Erlangen (DE); and Anton Mauder, Kolbermoor (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Oct. 27, 2020, as Appl. No. 17/80,950.
Claims priority of application No. 102019129412.6 (DE), filed on Oct. 31, 2019.
Prior Publication US 2021/0134960 A1, May 6, 2021
Int. Cl. H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/1608 (2013.01) [H01L 29/045 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A silicon carbide device, comprising:
a silicon carbide body having a hexagonal crystal lattice with a c-plane and further main planes, wherein the further main planes comprise a-planes and m-planes, wherein a lateral mean surface plane of the silicon carbide body is tilted to the c-plane by an off-axis angle, wherein the silicon carbide body comprises a columnar portion with column sidewalls, wherein at least three of the column sidewalls are oriented along a respective one of the further main planes; and
a trench gate structure in contact with the at least three of the column sidewalls.