US 11,735,632 B2
Semiconductor device
Seokhoon Kim, Suwon-si (KR); Dongmyoung Kim, Suwon-si (KR); Kanghun Moon, Hwaseong-si (KR); Hyunkwan Yu, Suwon-si (KR); Sanggil Lee, Ansan-si (KR); Seunghun Lee, Hwaseong-si (KR); Sihyung Lee, Hwaseong-si (KR); Choeun Lee, Pocheon-si (KR); Edward Namkyu Cho, Seongnam-si (KR); and Yang Xu, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 9, 2021, as Appl. No. 17/546,690.
Application 17/546,690 is a continuation of application No. 16/806,629, filed on Mar. 2, 2020, granted, now 11,217,667.
Claims priority of application No. 10-2019-0089217 (KR), filed on Jul. 23, 2019.
Prior Publication US 2022/0102498 A1, Mar. 31, 2022
Int. Cl. H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01)
CPC H01L 29/0847 (2013.01) [H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/785 (2013.01); H01L 29/7853 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a plurality of channels on the substrate apart from one another in a vertical direction;
a gate structure contacting the plurality of channels;
a gate spacer on at least one side surface of the gate structure; and
a source/drain structure contacting the plurality of channels, the source/drain structure comprising one of a source structure and a drain structure,
wherein a topmost portion of a bottom surface of the gate spacer is lower than a topmost portion of a top surface of a topmost channel from among the plurality of channels,
a topmost portion of a top surface of the source/drain structure is lower than the topmost portion of the top surface of the topmost channel, and
wherein the topmost portion of the bottom surface of the gate spacer contacts the source/drain structure.