CPC H01L 27/1229 (2013.01) [G09G 3/20 (2013.01); G11C 19/28 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 29/045 (2013.01); H01L 29/1033 (2013.01); H01L 29/24 (2013.01); H01L 29/247 (2013.01); H01L 29/41733 (2013.01); H01L 29/42372 (2013.01); H01L 29/45 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/78693 (2013.01); G09G 2310/0267 (2013.01); G09G 2310/0275 (2013.01); G09G 2310/0286 (2013.01); H01L 29/4908 (2013.01); H01L 29/78609 (2013.01); H10K 59/1213 (2023.02)] | 9 Claims |
1. A semiconductor device comprising a transistor, the transistor comprising:
an oxide semiconductor layer, in which a channel is formed,
wherein the oxide semiconductor layer comprises In, Sn, Ga, and Zn,
wherein the oxide semiconductor layer comprises a first region comprising crystal grains, in which c-axes are oriented in a direction perpendicular or substantially perpendicular to a surface of the oxide semiconductor layer, in a superficial portion of the oxide semiconductor layer, and
wherein the oxide semiconductor layer comprises a second region comprising an amorphous region which comprises a first microcrystal and a second microcrystal.
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