US 11,735,595 B2
Thin film tunnel field effect transistors having relatively increased width
Prashant Majhi, San Jose, CA (US); Brian S. Doyle, Portland, OR (US); Ravi Pillarisetty, Portland, OR (US); Abhishek A. Sharma, Hillsboro, OR (US); and Elijah V. Karpov, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Apr. 14, 2022, as Appl. No. 17/721,236.
Application 17/721,236 is a division of application No. 16/631,811, granted, now 11,335,705, previously published as PCT/US2017/051841, filed on Sep. 15, 2017.
Prior Publication US 2022/0246646 A1, Aug. 4, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/1211 (2013.01) [H01L 29/42384 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit structure, comprising:
an insulator structure above a substrate, the insulator structure having a trench therein, the trench having sidewalls and a bottom;
a channel material layer in the trench in the insulator structure, the channel material layer conformal with the sidewalls and bottom of the trench;
a gate dielectric layer on the channel material layer in the trench, the gate dielectric layer conformal with the channel material layer conformal with the sidewalls and bottom of the trench;
a gate electrode on the gate dielectric layer in the trench, the gate electrode having a first side opposite a second side and having an exposed top surface; a first conductive contact laterally adjacent the first side of the gate electrode, the first conductive contact adjacent a source portion of the channel material layer conformal with the sidewalls of the trench, the source portion of the channel material layer having a first conductivity type; and
a second conductive contact laterally adjacent the second side of the gate electrode, the second conductive contact adjacent a drain portion of the channel material layer conformal with the sidewalls of the trench, the drain portion of the channel material layer having a second conductivity type opposite the first conductivity type.