US 11,735,468 B2
Interconnect structures including self aligned vias
Chih-Chao Yang, Glenmont, NY (US); Terry A. Spooner, Mechanicville, NY (US); Koichi Motoyama, Clifton Park, NY (US); and Shyng-Tsong Chen, Rensselaer, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Dec. 3, 2021, as Appl. No. 17/541,450.
Application 17/541,450 is a division of application No. 16/576,712, filed on Sep. 19, 2019, granted, now 11,227,792.
Prior Publication US 2022/0093453 A1, Mar. 24, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 21/76802 (2013.01) [H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device for an integrated circuit, the semiconductor device comprising:
a first interconnect structure disposed above a substrate, the first interconnect structure comprising a metal line formed in a first interlayer dielectric; and
a second interconnect structure overlying the first interconnect structure, the second interconnect structure comprising:
a second cap layer on the first interlayer dielectric;
a second interlayer dielectric thereon; and
at least one self-aligned via in the second interlayer dielectric conductively coupled to at least a portion of the metal line of the first interconnect structure, wherein a misalignment of the at least one self-aligned via results in the at least one self-aligned via landing on both the metal line of the first interconnect structure and the second cap layer, wherein the second cap layer is an insulating material, wherein a portion of the second interlayer dielectric is immediately over the metal line, the portion of the second interlayer dielectric having a bottom surface below a top surface of the second cap layer such that a sidewall face of the second cap layer and a sidewall face of the portion of the second interlayer dielectric are directly opposite one another with the at least one self-aligned via opening in between.