CPC H01L 21/6836 (2013.01) [H01L 21/304 (2013.01); H01L 21/78 (2013.01); B29C 65/02 (2013.01); B29C 65/44 (2013.01)] | 19 Claims |
1. A processing method for a wafer, on a front side of which a plurality of devices are formed in a grid pattern defined by a plurality of intersecting streets, to grind a back side of the wafer, comprising:
a thermocompression-bonding sheet arrangement step of arranging, on the front side of the wafer, a thermocompression-bonding sheet of a size sufficient to cover the wafer;
an integration step of pressing the thermocompression-bonding sheet under heat by a planarizing member, so that the thermocompression-bonding sheet is planarized and the thermocompression-bonding sheet and the wafer are integrated together;
a grinding step of, after the integration step, holding the wafer on a side of the thermocompression-bonding sheet on a chuck table of a grinding apparatus, and grinding the wafer to a desired thickness while supplying grinding water to the back side of the wafer; and
a thermocompression-bonding sheet rinsing step of, after the grinding step, unloading the integrated wafer and the thermocompression-bonding sheet from the chuck table, and rinsing the thermocompression-bonding sheet with rinse water that is directed towards the thermocompression-bonding sheet.
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