CPC H01L 21/0271 (2013.01) [H01L 21/0206 (2013.01); H01L 21/0228 (2013.01); H01L 21/02057 (2013.01); H01L 21/02181 (2013.01); H01L 21/02266 (2013.01); H01L 21/02274 (2013.01); H01L 21/02334 (2013.01); H01L 21/3105 (2013.01); H01L 21/67207 (2013.01); H01L 21/32 (2013.01); H01L 21/6831 (2013.01)] | 20 Claims |
1. A processing chamber comprising:
a pedestal positioned within the processing chamber and comprising a heater, the pedestal configured to hold a substrate;
an inlet configured to input one or more process gases to the processing chamber; and
a control system coupled to the processing chamber, the control system comprising: a first configuration to heat the substrate to a first temperature, a second configuration to expose the substrate to one or more of a plasma from a plasma source or radicals from a radical source, a third configuration to control a flow of an activating agent to the substrate to form hydroxyl terminations thereon, and a fourth configuration to expose the substrate to multiple cycles of exposure to a SAM molecule, heating the substrate and exposure to the activating agent.
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