US 11,735,420 B2
Wafer treatment for achieving defect-free self-assembled monolayers
Chang Ke, Sunnyvale, CA (US); Lei Zhou, San Jose, CA (US); Biao Liu, San Jose, CA (US); Cheng Pan, San Jose, CA (US); Yuanhong Guo, San Jose, CA (US); Liqi Wu, San Jose, CA (US); Michael S. Jackson, Sunnyvale, CA (US); Ludovic Godet, Sunnyvale, CA (US); Tobin Kaufman-Osborn, Sunnyvale, CA (US); Erica Chen, Cupertino, CA (US); and Paul F. Ma, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Sep. 8, 2020, as Appl. No. 17/14,975.
Application 17/014,975 is a continuation of application No. 16/008,495, filed on Jun. 14, 2018, granted, now 10,770,292.
Claims priority of provisional application 62/519,834, filed on Jun. 14, 2017.
Prior Publication US 2020/0402792 A1, Dec. 24, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/3105 (2006.01); H01L 21/683 (2006.01); H01L 21/32 (2006.01)
CPC H01L 21/0271 (2013.01) [H01L 21/0206 (2013.01); H01L 21/0228 (2013.01); H01L 21/02057 (2013.01); H01L 21/02181 (2013.01); H01L 21/02266 (2013.01); H01L 21/02274 (2013.01); H01L 21/02334 (2013.01); H01L 21/3105 (2013.01); H01L 21/67207 (2013.01); H01L 21/32 (2013.01); H01L 21/6831 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A processing chamber comprising:
a pedestal positioned within the processing chamber and comprising a heater, the pedestal configured to hold a substrate;
an inlet configured to input one or more process gases to the processing chamber; and
a control system coupled to the processing chamber, the control system comprising: a first configuration to heat the substrate to a first temperature, a second configuration to expose the substrate to one or more of a plasma from a plasma source or radicals from a radical source, a third configuration to control a flow of an activating agent to the substrate to form hydroxyl terminations thereon, and a fourth configuration to expose the substrate to multiple cycles of exposure to a SAM molecule, heating the substrate and exposure to the activating agent.