US 11,735,416 B2
Electronic devices comprising crystalline materials and related memory devices and systems
Ashonita A. Chavan, Boise, ID (US); Durai Vishak Nirmal Ramaswamy, Boise, ID (US); Michael Mutch, Meridian, ID (US); and Sameer Chhajed, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 21, 2020, as Appl. No. 17/27,331.
Application 17/027,331 is a division of application No. 16/122,004, filed on Sep. 5, 2018, granted, now 10,790,145.
Prior Publication US 2021/0005451 A1, Jan. 7, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 21/762 (2006.01)
CPC H01L 21/02592 (2013.01) [H01L 21/02532 (2013.01); H01L 21/02667 (2013.01); H01L 21/762 (2013.01); H01L 27/1222 (2013.01); H01L 27/1285 (2013.01); H01L 29/78642 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
crystalline pillars, each crystalline pillar comprising a portion of a first material and a portion of a second material over and in contact with the portion of the first material, wherein each of the first material and the second material comprise at least one element selected from the group consisting of silicon and germanium, and wherein the second material exhibits a composition different than a composition of the first material;
wherein:
each crystalline pillar is laterally isolated from each adjacent crystalline pillar;
the portion of the first material in each pillar is in single crystalline form; and
each crystalline pillar comprises a continuous crystalline structure that includes the portion of the first material and the portion of the second material.