US 11,735,274 B2
Proactive read disturb mitigation
Saeed Sharifi Tehrani, San Diego, CA (US); and Sivagnanam Parthasarathy, Carlsbad, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 10, 2022, as Appl. No. 17/838,109.
Application 17/838,109 is a division of application No. 16/846,974, filed on Apr. 13, 2020, granted, now 11,361,831.
Prior Publication US 2022/0301637 A1, Sep. 22, 2022
Int. Cl. G11C 11/34 (2006.01); G11C 16/26 (2006.01); G11C 29/52 (2006.01); G11C 7/10 (2006.01); G11C 29/42 (2006.01); G11C 16/34 (2006.01); G11C 7/04 (2006.01)
CPC G11C 16/26 (2013.01) [G11C 7/04 (2013.01); G11C 7/1045 (2013.01); G11C 7/1072 (2013.01); G11C 16/3404 (2013.01); G11C 29/42 (2013.01); G11C 29/52 (2013.01); G11C 2207/2254 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
receiving a request to perform a set of read operations;
selecting a random read operation of the set of read operations, wherein the random read operation is performed on a first wordline located on a first portion of a first data block on a memory device;
performing an error detection operation on a second wordline and a third wordline located on the first portion of the first data block to determine an error rate associated with the second wordline and the third wordline, wherein the second wordline and the third wordline are adjacent to the first wordline;
determining whether the error rate satisfies a threshold criterion; and
responsive to determining that the error rate satisfies the threshold criterion, migrating data stored on the first portion of the first data block to a second data block on the memory device.