CPC G11C 13/0069 (2013.01) [G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); H10B 63/80 (2023.02); H10N 70/063 (2023.02); H10N 70/24 (2023.02); H10N 70/884 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02); G11C 2013/0073 (2013.01); G11C 2213/52 (2013.01)] | 13 Claims |
1. A method, comprising:
increasing a concentration of a chemical element at a first surface of a chalcogenide material memory storage component to store a first logic value; and
increasing a concentration of the chemical element at a second surface of the chalcogenide material memory storage component to store a second logic value different from the first logic value, wherein the first surface is opposite the second surface.
|