US 11,735,261 B2
Programming enhancement in self-selecting memory
Andrea Redaelli, Casatenovo (IT); Agostino Pirovano, Milan (IT); Innocenzo Tortorelli, Cernusco sul Naviglio (IT); and Fabio Pellizzer, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 7, 2021, as Appl. No. 17/544,679.
Application 17/544,679 is a division of application No. 16/518,847, filed on Jul. 22, 2019, granted, now 11,200,950.
Application 16/518,847 is a division of application No. 15/582,329, filed on Apr. 28, 2017, granted, now 10,424,374, issued on Sep. 24, 2019.
Prior Publication US 2022/0172779 A1, Jun. 2, 2022
Int. Cl. G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01); H10N 70/00 (2023.01)
CPC G11C 13/0069 (2013.01) [G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); H10B 63/80 (2023.02); H10N 70/063 (2023.02); H10N 70/24 (2023.02); H10N 70/884 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02); G11C 2013/0073 (2013.01); G11C 2213/52 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method, comprising:
increasing a concentration of a chemical element at a first surface of a chalcogenide material memory storage component to store a first logic value; and
increasing a concentration of the chemical element at a second surface of the chalcogenide material memory storage component to store a second logic value different from the first logic value, wherein the first surface is opposite the second surface.