US 11,735,258 B2
Increase of a sense current in memory
Zhongyuan Lu, Boise, ID (US); Robert J. Gleixner, San Jose, CA (US); and Karthik Sarpatwari, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 1, 2022, as Appl. No. 17/711,211.
Application 17/711,211 is a continuation of application No. 17/004,259, filed on Aug. 27, 2020, granted, now 11,295,811.
Prior Publication US 2022/0223203 A1, Jul. 14, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/00 (2006.01); G11C 13/00 (2006.01)
CPC G11C 13/004 (2013.01) [G11C 13/0004 (2013.01); G11C 2013/0045 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a memory having a plurality of memory cells; and
circuitry configured to:
apply a voltage to an access line to which a memory cell of the plurality of memory cells is coupled;
determine whether an amount of current on the access line in response to the applied voltage meets or exceeds a threshold amount of current; and
determine whether to use a current of a first magnitude or of a second magnitude to sense a data state of the memory cell based on whether the amount of current on the access line in response to the applied voltage meets or exceeds the threshold amount of current.