US 11,733,896 B2
Reliability scan assisted voltage bin selection
Vamsi Pavan Rayaprolu, San Jose, CA (US); Shane Nowell, Boise, ID (US); and Michael Sheperek, Longmont, CO (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed on May 13, 2022, as Appl. No. 17/744,563.
Application 17/744,563 is a continuation of application No. 17/099,546, filed on Nov. 16, 2020, granted, now 11,340,813.
Prior Publication US 2022/0276784 A1, Sep. 1, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01); G11C 16/04 (2006.01)
CPC G06F 3/064 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
performing, at a first frequency, a calibration scan, wherein performing the calibration scan comprises:
calibrating block family-to-bin associations for one or more younger voltage bins based on first measurement data determined by the calibration scan; and
calibrating block family-to-bin associations for one or more older voltage bins based on second measurement data provided by a media management scan, wherein the media management scan is performed at a second frequency,
wherein the second frequency is lower than the first frequency, and
wherein each of the younger voltage bins satisfies a first age threshold criterion, and each of the older voltage bins satisfies a second age threshold criterion.