CPC C23C 16/402 (2013.01) [C23C 16/52 (2013.01)] | 8 Claims |
1. A method of forming a low-H silicon dioxide layer, the method comprising exposing a substrate to a hydrogen-free silicon precursor comprising Si(NCS)4, a hydrogen-free oxygen source, and a plasma to form a low-H silicon dioxide layer, the low-H silicon dioxide layer having less than or equal to about 3 percent hydrogen on an atomic basis.
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