US 11,732,352 B2
Hydrogen free silicon dioxide
Zeqing Shen, San Jose, CA (US); Bo Qi, San Jose, CA (US); Abhijit Basu Mallick, Palo Alto, CA (US); and Nitin K. Ingle, Santa Clara, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Feb. 11, 2021, as Appl. No. 17/173,871.
Claims priority of provisional application 62/978,314, filed on Feb. 19, 2020.
Prior Publication US 2021/0254210 A1, Aug. 19, 2021
Int. Cl. C23C 16/40 (2006.01); C23C 16/52 (2006.01)
CPC C23C 16/402 (2013.01) [C23C 16/52 (2013.01)] 8 Claims
 
1. A method of forming a low-H silicon dioxide layer, the method comprising exposing a substrate to a hydrogen-free silicon precursor comprising Si(NCS)4, a hydrogen-free oxygen source, and a plasma to form a low-H silicon dioxide layer, the low-H silicon dioxide layer having less than or equal to about 3 percent hydrogen on an atomic basis.