US 11,731,423 B2
Wafer structure
Hao-Jan Mou, Hsinchu (TW); Ying-Lun Chang, Hsinchu (TW); Hsien-Chung Tai, Hsinchu (TW); Yung-Lung Han, Hsinchu (TW); Chi-Feng Huang, Hsinchu (TW); and Chun-Yi Kuo, Hsinchu (TW)
Assigned to MICROJET TECHNOLOGY CO., LTD., Hsinchu (TW)
Filed by Microjet Technology Co., Ltd., Hsinchu (TW)
Filed on Aug. 18, 2021, as Appl. No. 17/405,874.
Claims priority of application No. 109141081 (TW), filed on Nov. 24, 2020.
Prior Publication US 2022/0161555 A1, May 26, 2022
Int. Cl. B41J 2/14 (2006.01); B41J 2/16 (2006.01); H01L 29/423 (2006.01); B41J 2/045 (2006.01); B41J 2/175 (2006.01)
CPC B41J 2/14016 (2013.01) [B41J 2/1606 (2013.01); H01L 29/42372 (2013.01); B41J 2/0458 (2013.01); B41J 2/1635 (2013.01); B41J 2/175 (2013.01); B41J 2202/13 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A wafer structure, comprising:
a chip substrate, which is a silicon substrate, fabricated by a semiconductor process; and
a plurality of inkjet chips comprising at least one first inkjet chip and at least one second inkjet chip directly formed on the chip substrate by the semiconductor process, respectively, wherein the plurality of inkjet chips are diced into the at least one first inkjet chip and the at least one second inkjet chip for inkjet printing;
wherein each of the at least one first inkjet chip and the at least one second inkjet chip comprises:
at least one ink-supply channel configured to provide ink; and
a plurality of ink-drop generators respectively connected to the at least one ink-supply channel and formed on the chip substrate,
wherein each of the ink-drop generators comprises a barrier layer, an ink-supply chamber and a nozzle, and the ink-supply chamber and the nozzle are integrally formed in the barrier layer;
wherein each of the ink-drop generators further comprises a thermal-barrier layer, a resistance heating layer, a conductive layer and a protective layer, wherein the thermal-barrier layer is formed on the chip substrate, the resistance heating layer is formed on the thermal-barrier layer, the conductive layer and a part of the protective layer are formed on the resistance heating layer, and the barrier layer is directly formed on the protective layer, wherein the ink-supply chamber has a bottom in communication with the protective layer and a top in communication with the nozzle, wherein the thermal-barrier layer has a thickness ranging from 500 angstroms to 5000 angstroms, the protective layer has a thickness ranging from 150 angstroms to 3500 angstroms, the resistance heating layer has a thickness ranging from 100 angstroms to 500 angstroms, the resistance heating layer has a length ranging from 5 microns to 30 microns, and the resistance heating layer has a width ranging from 5 microns to 10 microns,
wherein the barrier layer includes two opposite inner sidewalls defining two opposite sides of the ink-supply chamber, each of the two opposite inner sidewalls of the barrier layer continuously extends from a respective one of two opposite sides of a top surface of a continuous portion of the protective layer toward the nozzle, the two opposite inner sidewalls of the barrier layer entirely and directly overlap with the conductive layer in a direction normal to the bottom of the ink-supply chamber, and the top surface of the continuous portion of the protective layer is the bottom of the ink-supply chamber, and
wherein an ink supply path is formed between the at least one ink-supply channel and the ink-supply chamber of each of the plurality of ink-drop generators, and the ink supply path is configured to supply the ink from the at least one ink-supply channel to the ink-supply chamber in a plane parallel with the bottom of the ink supply chamber.