US 11,731,234 B2
Method of double-side polishing semiconductor wafer
Mami Kubota, Tokyo (JP); Fumiya Fukuhara, Tokyo (JP); and Tomonori Miura, Tokyo (JP)
Assigned to SUMCO CORPORATION, Tokyo (JP)
Appl. No. 16/341,692
Filed by SUMCO CORPORATION, Tokyo (JP)
PCT Filed Oct. 3, 2017, PCT No. PCT/JP2017/036008
§ 371(c)(1), (2) Date Apr. 12, 2019,
PCT Pub. No. WO2018/083931, PCT Pub. Date May 11, 2018.
Claims priority of application No. 2016-215561 (JP), filed on Nov. 2, 2016.
Prior Publication US 2020/0039021 A1, Feb. 6, 2020
Int. Cl. B24B 37/08 (2012.01); B24B 37/28 (2012.01); H01L 21/02 (2006.01); B24B 37/20 (2012.01); B24B 37/04 (2012.01)
CPC B24B 37/20 (2013.01) [B24B 37/042 (2013.01); B24B 37/28 (2013.01); H01L 21/02016 (2013.01); H01L 21/02024 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method of double-side polishing of a semiconductor wafer using a double-side polishing apparatus, comprising:
a step of predetermining a criterion function for determining polishing tendencies of double-side polishing by performing multiple regression analysis based on a shape index of a plurality of semiconductor wafers having been subjected to double-side polishing using the double-side polishing apparatus and on apparatus log data of the double-side polishing apparatus in a last stage of polishing corresponding to the shape index;
a first step of starting double-side polishing of the semiconductor wafer under initial polishing conditions;
subsequent to the first step, a second step of while performing double-side polishing on the semiconductor wafer under the initial polishing conditions, calculating a value of the criterion function using apparatus log data obtained from a last stage of polishing in the first step, and setting on the double-side polishing apparatus polishing conditions obtained by adjusting the initial polishing conditions based on the value of the criterion function; and
subsequent to the second step, a third step of performing double-side polishing of the semiconductor wafer under the adjusted polishing conditions.