CPC B24B 37/20 (2013.01) [B24B 37/042 (2013.01); B24B 37/28 (2013.01); H01L 21/02016 (2013.01); H01L 21/02024 (2013.01)] | 4 Claims |
1. A method of double-side polishing of a semiconductor wafer using a double-side polishing apparatus, comprising:
a step of predetermining a criterion function for determining polishing tendencies of double-side polishing by performing multiple regression analysis based on a shape index of a plurality of semiconductor wafers having been subjected to double-side polishing using the double-side polishing apparatus and on apparatus log data of the double-side polishing apparatus in a last stage of polishing corresponding to the shape index;
a first step of starting double-side polishing of the semiconductor wafer under initial polishing conditions;
subsequent to the first step, a second step of while performing double-side polishing on the semiconductor wafer under the initial polishing conditions, calculating a value of the criterion function using apparatus log data obtained from a last stage of polishing in the first step, and setting on the double-side polishing apparatus polishing conditions obtained by adjusting the initial polishing conditions based on the value of the criterion function; and
subsequent to the second step, a third step of performing double-side polishing of the semiconductor wafer under the adjusted polishing conditions.
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