US 11,730,433 B2
X-ray detector
Gilles Gasiot, Seyssinet-Pariset (FR); Severin Trochut, Crets en Belledonne (FR); Olivier Le Neel, Saint Martin d Uriage (FR); and Victor Malherbe, Grenoble (FR)
Assigned to STMicroelectronics (Crolles 2) SAS, Crolles (FR); and STMicroelectronics SA, Montrouge (FR)
Filed by STMicroelectronics (Crolles 2) SAS, Crolles (FR); and STMicroelectronics SA, Montrouge (FR)
Filed on Nov. 18, 2021, as Appl. No. 17/529,543.
Claims priority of application No. 2011963 (FR), filed on Nov. 20, 2020.
Prior Publication US 2022/0160314 A1, May 26, 2022
Int. Cl. A61B 6/00 (2006.01); G01T 1/24 (2006.01)
CPC A61B 6/4208 (2013.01) [G01T 1/24 (2013.01)] 34 Claims
OG exemplary drawing
 
1. An X-ray detector, comprising:
a first circuit comprising a first NPN-type bipolar transistor; and
a second circuit configured to compare a voltage of the first circuit with a reference value substantially equal to a value of said voltage which would occur when the first circuit has received a threshold quantity of X-rays;
wherein the first circuit is configured so that a base voltage of the first NPN-type bipolar transistor is, during the operation of the detector, within a range of values for which a gain of the first NPN-type bipolar transistor having received no X-rays is at least 1.5 times greater than the gain of the first NPN-type bipolar transistor having received the threshold quantity of X-rays.