US 12,396,374 B2
Semiconductor device comprising plurality of diffusion layer electrodes with different conductivities and gate electrodes
Digh Hisamoto, Tokyo (JP); Satoru Akiyama, Tokyo (JP); Toshiyuki Mine, Tokyo (JP); Noriyuki Lee, Tokyo (JP); Gou Shinkai, Tokyo (JP); Shinichi Saito, Tokyo (JP); and Ryuta Tsuchiya, Tokyo (JP)
Assigned to Hitachi, Ltd., Tokyo (JP)
Filed by Hitachi, Ltd, Tokyo (JP)
Filed on Feb. 2, 2022, as Appl. No. 17/590,965.
Claims priority of application No. 2021-027123 (JP), filed on Feb. 24, 2021.
Prior Publication US 2022/0271213 A1, Aug. 25, 2022
Int. Cl. H10N 60/10 (2023.01); G06N 10/40 (2022.01); H10N 60/01 (2023.01); H10N 69/00 (2023.01)
CPC H10N 60/128 (2023.02) [G06N 10/40 (2022.01); H10N 60/01 (2023.02); H10N 60/11 (2023.02); H10N 69/00 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first active region formed in a semiconductor layer formed on an insulating film formed in a semiconductor substrate and having a first extension portion extending in a first direction and a second extension portion extending in a second direction intersecting with the first direction;
a first diffusion layer electrode of a first conductivity type provided in the first extension portion;
second and third diffusion layer electrodes of a second conductivity type provided in the second extension portion so as to interpose a first connecting portion connecting the first extension portion and the second extension portion;
a first gate electrode formed on the first extension portion between the first diffusion layer electrode and the first connecting portion through an insulating film formed on the semiconductor layer; and
a second gate electrode formed on the first connecting portion through the insulating film formed on the semiconductor layer.