US 12,396,327 B2
Array substrate structure
Kuan-Feng Lee, Miao-Li County (TW)
Assigned to INNOLUX CORPORATION, Miao-Li County (TW)
Filed by InnoLux Corporation, Miao-Li County (TW)
Filed on Jun. 27, 2024, as Appl. No. 18/756,149.
Application 18/756,149 is a continuation of application No. 18/188,009, filed on Mar. 22, 2023, granted, now 12,052,894.
Application 18/188,009 is a continuation of application No. 17/249,801, filed on Mar. 15, 2021, granted, now 11,631,728, issued on Apr. 18, 2023.
Application 17/249,801 is a continuation of application No. 16/679,702, filed on Nov. 11, 2019, granted, now 10,978,533, issued on Apr. 13, 2021.
Application 16/679,702 is a continuation of application No. 15/629,912, filed on Jun. 22, 2017, granted, now 10,504,982, issued on Dec. 10, 2019.
Claims priority of application No. 105121191 (TW), filed on Jul. 5, 2016.
Prior Publication US 2024/0349537 A1, Oct. 17, 2024
Int. Cl. H10K 59/121 (2023.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/131 (2023.01); H10K 59/40 (2023.01)
CPC H10K 59/1213 (2023.02) [H10D 86/411 (2025.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); H10D 86/471 (2025.01); H10D 86/60 (2025.01); H10K 59/131 (2023.02); H01L 2224/16225 (2013.01); H10D 30/6731 (2025.01); H10D 30/6745 (2025.01); H10D 30/6755 (2025.01); H10D 86/481 (2025.01); H10K 59/40 (2023.02)] 4 Claims
OG exemplary drawing
 
1. An array substrate structure, comprising:
a substrate;
a first transistor disposed on the substrate, comprising a first semiconductor layer having a drain region;
a second transistor disposed on the substrate, comprising a gate electrode;
a second semiconductor layer disposed under the gate electrode;
an electrode directly connected to the second semiconductor layer; and
a light-emitting element electrically connected to the second semiconductor layer through the electrode;
wherein the drain region of the first semiconductor layer is electrically connected to the gate electrode of the second transistor;
wherein the gate electrode of the second transistor is a part of a storage capacitor.