| CPC H10K 39/32 (2023.02) | 15 Claims |

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1. A solid-state imaging device, comprising:
a semiconductor substrate having a front face and a back face; and
a plurality of photoelectric conversion elements that are arrayed in a matrix,
wherein each of the plurality of photoelectric conversion elements includes:
a first electrode and a second electrode,
a photoelectric conversion film that is disposed between the first electrode and the second electrode,
a semiconductor layer that is disposed between the photoelectric conversion film and the second electrode,
at least one insulating film that is disposed within and surrounded on four sides by the semiconductor layer, and
at least one third electrode that is disposed within the at least one insulating film.
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